Depth-dependent Detection Mechanisms of Coherent Phonons in n-type GaAs

Transient reflectivity measurements at different probing wavelengths reveal detection mechanisms of coherent phonon and phonon-plasmon coupled modes of n-doped GaAs to be strongly depth-dependent due to the carrier depletion at the surface.

Bibliographic Details
Main Authors: Petek Hrvoje, Kumar Basak Amlan, Ishioka Kunie
Format: Article
Language:English
Published: EDP Sciences 2013-03-01
Series:EPJ Web of Conferences
Online Access:http://dx.doi.org/10.1051/epjconf/20134104018