Depth-dependent Detection Mechanisms of Coherent Phonons in n-type GaAs
Transient reflectivity measurements at different probing wavelengths reveal detection mechanisms of coherent phonon and phonon-plasmon coupled modes of n-doped GaAs to be strongly depth-dependent due to the carrier depletion at the surface.
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
EDP Sciences
2013-03-01
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Series: | EPJ Web of Conferences |
Online Access: | http://dx.doi.org/10.1051/epjconf/20134104018 |