An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate d...

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Bibliographic Details
Main Authors: Junfeng Li, Shuman Mao, Yuehang Xu, Xiaodong Zhao, Weibo Wang, Fangjing Guo, Qingfeng Zhang, Yunqiu Wu, Bing Zhang, Tangsheng Chen, Bo Yan, Ruimin Xu, Yanrong Li
Format: Article
Language:English
Published: MDPI AG 2018-08-01
Series:Micromachines
Subjects:
AlGaN/GaN HEMT
DIBL effect
channel length modulation
power amplifier
W band
Online Access:http://www.mdpi.com/2072-666X/9/8/396

Internet

http://www.mdpi.com/2072-666X/9/8/396

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