An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate d...
Main Authors: | , , , , , , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2018-08-01
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Series: | Micromachines |
Subjects: | |
Online Access: | http://www.mdpi.com/2072-666X/9/8/396 |