An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band

An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate d...

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Main Authors: Junfeng Li, Shuman Mao, Yuehang Xu, Xiaodong Zhao, Weibo Wang, Fangjing Guo, Qingfeng Zhang, Yunqiu Wu, Bing Zhang, Tangsheng Chen, Bo Yan, Ruimin Xu, Yanrong Li
Format: Article
Language:English
Published: MDPI AG 2018-08-01
Series:Micromachines
Subjects:
AlGaN/GaN HEMT
DIBL effect
channel length modulation
power amplifier
W band
Online Access:http://www.mdpi.com/2072-666X/9/8/396
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spelling doaj-11ef273816644e4abf94babdd96967cc2020-11-24T23:33:39ZengMDPI AGMicromachines2072-666X2018-08-019839610.3390/mi9080396mi9080396An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W bandJunfeng Li0Shuman Mao1Yuehang Xu2Xiaodong Zhao3Weibo Wang4Fangjing Guo5Qingfeng Zhang6Yunqiu Wu7Bing Zhang8Tangsheng Chen9Bo Yan10Ruimin Xu11Yanrong Li12School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaSchool of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaSchool of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaSchool of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaSchool of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaSchool of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaNanjing Electronic Devices Institute, Nanjing 210016, ChinaSchool of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaSchool of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaSchool of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 611731, ChinaAn improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.http://www.mdpi.com/2072-666X/9/8/396AlGaN/GaN HEMTDIBL effectchannel length modulationpower amplifierW band
collection DOAJ
language English
format Article
sources DOAJ
author Junfeng Li
Shuman Mao
Yuehang Xu
Xiaodong Zhao
Weibo Wang
Fangjing Guo
Qingfeng Zhang
Yunqiu Wu
Bing Zhang
Tangsheng Chen
Bo Yan
Ruimin Xu
Yanrong Li
spellingShingle Junfeng Li
Shuman Mao
Yuehang Xu
Xiaodong Zhao
Weibo Wang
Fangjing Guo
Qingfeng Zhang
Yunqiu Wu
Bing Zhang
Tangsheng Chen
Bo Yan
Ruimin Xu
Yanrong Li
An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
Micromachines
AlGaN/GaN HEMT
DIBL effect
channel length modulation
power amplifier
W band
author_facet Junfeng Li
Shuman Mao
Yuehang Xu
Xiaodong Zhao
Weibo Wang
Fangjing Guo
Qingfeng Zhang
Yunqiu Wu
Bing Zhang
Tangsheng Chen
Bo Yan
Ruimin Xu
Yanrong Li
author_sort Junfeng Li
title An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
title_short An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
title_full An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
title_fullStr An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
title_full_unstemmed An Improved Large Signal Model for 0.1 μm AlGaN/GaN High Electron Mobility Transistors (HEMTs) Process and Its Applications in Practical Monolithic Microwave Integrated Circuit (MMIC) Design in W band
title_sort improved large signal model for 0.1 μm algan/gan high electron mobility transistors (hemts) process and its applications in practical monolithic microwave integrated circuit (mmic) design in w band
publisher MDPI AG
series Micromachines
issn 2072-666X
publishDate 2018-08-01
description An improved empirical large signal model for 0.1 µm AlGaN/GaN high electron mobility transistor (HEMT) process is proposed in this paper. The short channel effect including the drain induced barrier lowering (DIBL) effect and channel length modulation has been considered for the accurate description of DC characteristics. In-house AlGaN/GaN HEMTs with a gate-length of 0.1 μm and different dimensions have been employed to validate the accuracy of the large signal model. Good agreement has been achieved between the simulated and measured S parameters, I-V characteristics and large signal performance at 28 GHz. Furthermore, a monolithic microwave integrated circuit (MMIC) power amplifier from 92 GHz to 96 GHz has been designed for validation of the proposed model. Results show that the improved large signal model can be used up to W band.
topic AlGaN/GaN HEMT
DIBL effect
channel length modulation
power amplifier
W band
url http://www.mdpi.com/2072-666X/9/8/396
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