A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor

A Simple Method for High-Performance, Solution-Processed, Amorphous ZrO2 Gate Insulator TFT with a High Concentration Precursor

Solution-processed high-k dielectric TFTs attract much attention since they cost relatively little and have a simple fabrication process. However, it is still a challenge to reduce the leakage of the current density of solution-processed dielectric TFTs. Here, a simple solution method is presented t...

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Bibliographic Details
Main Authors: Wei Cai, Zhennan Zhu, Jinglin Wei, Zhiqiang Fang, Honglong Ning, Zeke Zheng, Shangxiong Zhou, Rihui Yao, Junbiao Peng, Xubing Lu
Format: Article
Language:English
Published: MDPI AG 2017-08-01
Series:Materials
Subjects:
solution-processed ZrO2
low leakage current density
precursor concentration
control thickness
Online Access:https://www.mdpi.com/1996-1944/10/8/972

Internet

https://www.mdpi.com/1996-1944/10/8/972

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