A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

A Fast Extraction Method of Energy Distribution of Border Traps in AlGaN/GaN MIS-HEMT

MIS-HEMT is one of the most promising structures to prohibit the unfavorable gate leakage in conventional AlGaN/GaN HEMTs. However, the extra insulator layer introduces massive border traps at insulator/AlGaN interface and results in the poor reliability. In this brief the energy distribution of bor...

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Bibliographic Details
Main Authors: Rui Gao, Yijun Shi, Zhiyuan He, Yiqiang Chen, Yunfei En, Yun Huang, Zhigang Ji, Jianfu Zhang, Weidong Zhang, Xuefeng Zheng, Jinfeng Zhang, Yang Liu
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
GaN MIS-HEMT
energy distribution
Online Access:https://ieeexplore.ieee.org/document/9165722/

Internet

https://ieeexplore.ieee.org/document/9165722/

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