Error-Vulnerable Pattern-Aware Binary-to-Ternary Data Mapping for Improving Storage Density of 3LC Phase Change Memory

Multi-level cell (MLC) phase-change memory (PCM) is an attractive solution for next-generation memory that is composed of resistance-based nonvolatile devices. MLC PCM is superior to dynamic random-access memory (DRAM) with regard to scalability and leakage power. Therefore, various studies have foc...

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Bibliographic Details
Main Authors: Jeong Beom Hong, Young Sik Lee, Yong Wook Kim, Tae Hee Han
Format: Article
Language:English
Published: MDPI AG 2020-04-01
Series:Electronics
Subjects:
Online Access:https://www.mdpi.com/2079-9292/9/4/626