Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

Deep-Ultraviolet Emitting AlGaN Multiple Quantum Well Graded-Index Separate-Confinement Heterostructures Grown by MBE on SiC Substrates

Deep-ultraviolet emitting structures based on Al<sub>0.65</sub>Ga<sub>0.35</sub>N/Al<sub>0.8</sub>Ga<sub>0.2</sub> N multiple quantum wells (MQWs), embedded in compositionally graded Al<sub>x</sub>Ga<sub>1-x</sub>N films in the...

Full description

Bibliographic Details
Main Authors: Haiding Sun, Jian Yin, Emanuele Francesco Pecora, Luca Dal Negro, Roberto Paiella, Theodore D. Moustakas
Format: Article
Language:English
Published: IEEE 2017-01-01
Series:IEEE Photonics Journal
Subjects:
Ultraviolet
AlGaN
GRINSCH
amplified spontaneous emission
polarization doping
quantum well.
Online Access:https://ieeexplore.ieee.org/document/7950896/

Internet

https://ieeexplore.ieee.org/document/7950896/

Similar Items