Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

Towards superconductivity in p-type delta-doped Si/Al/Si heterostructures

In pursuit of superconductivity in p-type silicon (Si), we are using a single atomic layer of aluminum (Al) sandwiched between a Si substrate and a thin Si epi-layer. The delta layer was fabricated starting from an ultra high vacuum (UHV) flash anneal of Si(100) surface, followed by physical vapor d...

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Bibliographic Details
Main Authors: A. N. Ramanayaka, Hyun-Soo Kim, J. A. Hagmann, R. E. Murray, Ke Tang, F. Meisenkothen, H. R. Zhang, L. A. Bendersky, A. V. Davydov, Neil M. Zimmerman, C. A. Richter, J. M. Pomeroy
Format: Article
Language:English
Published: AIP Publishing LLC 2018-07-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.5045338

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http://dx.doi.org/10.1063/1.5045338

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