Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

Improvement in ferroelectricity of HfxZr1−xO2 thin films using top- and bottom-ZrO2 nucleation layers

A ferroelectric HfxZr1−xO2 (HZO) thin film crystallized with nanocrystalline top- and bottom-ZrO2 nucleation layers (D-ZrO2) exhibited superior remanent polarization (2Pr = Pr+ − Pr− = 29 μC/cm2) compared to that of similar thin films (12 μC/cm2) crystallized without a ZrO2 nucleation layer (w/o) wh...

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Bibliographic Details
Main Authors: Takashi Onaya, Toshihide Nabatame, Naomi Sawamoto, Akihiko Ohi, Naoki Ikeda, Takahiro Nagata, Atsushi Ogura
Format: Article
Language:English
Published: AIP Publishing LLC 2019-06-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5096626

Internet

http://dx.doi.org/10.1063/1.5096626

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