The Effect of Sampling Interval and Various Difference Approximation Methods on Extracting the Subthreshold Swing in InGaZnO Thin Film Transistor
In this work, the effect of gate voltage sampling interval (<inline-formula> <tex-math notation="LaTeX">$\Delta \text{V}_{\mathrm {gs}}$ </tex-math></inline-formula>) and various difference approximation methods on extracting the value of subthreshold swing (SS) hav...
| Main Authors: | , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2021-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9432860/ |