Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

Bias Stability Enhancement in Thin-Film Transistor with a Solution-Processed ZrO2 Dielectric as Gate Insulator

In this paper, a high-k metal-oxide film (ZrO2) was successfully prepared by a solution-phase method, and whose physical properties were measured by X-ray diffraction (XRD), X-ray reflectivity (XRR) and atomic force microscopy (AFM). Furthermore, indium–gallium–zinc oxide thin-fi...

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Bibliographic Details
Main Authors: Shangxiong Zhou, Zhiqiang Fang, Honglong Ning, Wei Cai, Zhennan Zhu, Jinglin Wei, Xubing Lu, Weijian Yuan, Rihui Yao, Junbiao Peng
Format: Article
Language:English
Published: MDPI AG 2018-05-01
Series:Applied Sciences
Subjects:
thin-film transistors
high dielectric constant
solution process
bias stability
Online Access:http://www.mdpi.com/2076-3417/8/5/806

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http://www.mdpi.com/2076-3417/8/5/806

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