Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)
Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si). ...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
International Science and Engineering Society, o.s.
2016-09-01
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| Series: | International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems |
| Online Access: | http://ijates.org/index.php/ijates/article/view/168 |