Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

• Main Authors: Frederick Ojiemhende Ehiagwina, Olufemi Oluseye Kehinde, Lateef Olashile Afolabi, Hassan Jimoh Onawola, Nurudeen Ajibola Iromini
• Format: Article
• Language: English
• Published: International Science and Engineering Society, o.s. 2016-09-01
• Series: International Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems
• Online Access: http://ijates.org/index.php/ijates/article/view/168

Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET) such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si).  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.