Realization of forming-free Ag/ZrO2-based threshold selector with high selectivity by optimizing film thickness and scaling down electrode size
The influence of the switching layer thickness and the device size on the threshold switching characteristics has been investigated in Ag/ZrO2/Pt selector device. By optimizing the switching layer thickness, excellent threshold switching characteristics such as forming-free behavior, high selectivit...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-02-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5023015 |