Investigation of the influence of oxygen on the rate and anisotropy of deep etching of silicon in the plasma-chemical reactor with the controlled magnetic field
The article presents the research results on the influence of the amount of oxygen in a mixture with sulfur hexafluoride on the rate and anisotropy of the silicon etching in the plasma-chemical reactor with the controlled magnetic field. The etching was performed under the pressure of (0,3-2,0)·10-3...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Politehperiodika
2017-10-01
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| Series: | Tekhnologiya i Konstruirovanie v Elektronnoi Apparature |
| Subjects: | |
| Online Access: | http://www.tkea.com.ua/tkea/2017/4-5_2017/pdf/06.pdf |