An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection

An novel thin layer SOI carrier-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed. The potential of the P-shield layer is clamped by two series-connected diodes. Therefore, the reverse voltage is sustained by the P-shield/Ndrift junct...

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Bibliographic Details
Main Authors: Bo Yi, Jia Lin, Jiayu Wu, Moufu Kong, Xingbi Chen
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8840918/