An Novel Thin Layer SOI Carrier-Stored Trench LIGBT With Enhanced Emitter Injection
An novel thin layer SOI carrier-stored (CS) trench lateral insulated gate bipolar transistor (TLIGBT) with diode-clamped P-shield layer is proposed. The potential of the P-shield layer is clamped by two series-connected diodes. Therefore, the reverse voltage is sustained by the P-shield/Ndrift junct...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8840918/ |