Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

Altering the Optical Properties of GaAsSb-Capped InAs Quantum Dots by Means of InAlAs Interlayers

Abstract In this work, we investigate the optical properties of InAs quantum dots (QDs) capped with composite In0.15Al0.85As/GaAs0.85Sb0.15 strain-reducing layers (SRLs) by means of high-resolution X-ray diffraction (HRXRD) and photoluminescence (PL) spectroscopy at 77 K. Thin In0.15Al0.85As layers...

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Bibliographic Details
Main Authors: A. Salhi, S. Alshaibani, Y. Alaskar, H. Albrithen, A. Albadri, A. Alyamani, M. Missous
Format: Article
Language:English
Published: SpringerOpen 2019-02-01
Series:Nanoscale Research Letters
Subjects:
Quantum dots
Strain
InAlAs/GaAsSb
III–V semiconductors
Online Access:http://link.springer.com/article/10.1186/s11671-019-2877-2

Internet

http://link.springer.com/article/10.1186/s11671-019-2877-2

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