Active Area Uniformity of InGaAs/InP Single-Photon Avalanche Diodes

Active Area Uniformity of InGaAs/InP Single-Photon Avalanche Diodes

We present a detailed characterization of the active area uniformity of InGaAs/InP Single-Photon Avalanche Diodes (SPADs) from two different design iterations. Nonuniformity of the electric field within the device active area has been measured through 2-D scans of detection efficiency and timing res...

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Bibliographic Details
Main Authors: A. Tosi, F. Acerbi, A. Dalla Mora, M. A. Itzler, X. Jiang
Format: Article
Language:English
Published: IEEE 2011-01-01
Series:IEEE Photonics Journal
Subjects:
Photodetectors
Single-Photon Avalanche Diodes (SPADs)
photon counting
near-infrared detector
Avalanche Photodiode
Online Access:https://ieeexplore.ieee.org/document/5671447/

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https://ieeexplore.ieee.org/document/5671447/

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