Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits

Fabrication, Characterization and Simulation of Sputtered Pt/In-Ga-Zn-O Schottky Diodes for Low-Frequency Half-Wave Rectifier Circuits

Amorphous In-Ga-Zn-O (IGZO) is a high-mobility semiconductor employed in modern thin-film transistors for displays and it is considered as a promising material for Schottky diode-based rectifiers. Properties of the electronic components based on IGZO strongly depend on the manufacturing parameters s...

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Bibliographic Details
Main Authors: Veronika Ulianova, Farhan Rasheed, Sami Bolat, Galo Torres Sevilla, Yurii Didenko, Xiaowei Feng, Ivan Shorubalko, Dominik Bachmann, Dmytro Tatarchuk, Mehdi B. Tahoori, Jasmin Aghassi-Hagmann, Yaroslav E. Romanyuk
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Amorphous In-Ga-Zn-O
capacitance-voltage characteristics
current-voltage characteristics
half-wave rectifiers
Schottky diodes
sputtering
Online Access:https://ieeexplore.ieee.org/document/9116972/

Internet

https://ieeexplore.ieee.org/document/9116972/

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