Surface etching during epitaxial h-BN growth on graphene
The vertically stacked hetero-structure is an important application of two-dimensional materials. In order to avoid contamination during sample transfer and stacking, and to achieve a scalable hexagonal boron nitride (h-BN)/graphene vertical heterostructure, direct growth of a h-BN film on graphene...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-07-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0055121 |