Low-power tunnel field effect transistors using mixed As and Sb based heterostructures
Reducing supply voltage is a promising way to address the power dissipation in nano-electronic circuits. However, the fundamental lower limit of subthreshold slope (SS) within metal oxide semiconductor field effect transistors (MOSFETs) is a major obstacle to further scaling the operation voltage wi...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
De Gruyter
2013-12-01
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| Series: | Nanotechnology Reviews |
| Subjects: | |
| Online Access: | https://doi.org/10.1515/ntrev-2012-0082 |