The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO<sub>X</sub> as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide

The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiO<sub>X</sub> as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide

We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium&#8722;tin&#8722;zinc&#8722;oxide (ITZO) as an active channel layer and multi-oxide structure of SiO<...

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Bibliographic Details
Main Authors: Joong-Hyun Park, Myung-Hun Shin, Jun-Sin Yi
Format: Article
Language:English
Published: MDPI AG 2019-05-01
Series:Nanomaterials
Subjects:
ITZO
transparent
NVM
charge trapping
memory window
retention
Online Access:https://www.mdpi.com/2079-4991/9/5/784

Internet

https://www.mdpi.com/2079-4991/9/5/784

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