An approximate CNTFET 4:2 compressor based on gate diffusion input and dynamic threshold
Abstract Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2021-08-01
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| Series: | Electronics Letters |
| Online Access: | https://doi.org/10.1049/ell2.12221 |