Coulomb localization in orbital degenerate, doped Mott insulators
We study electron localization in a three-band extended Hubbard model describing the t2g electrons of doped vanadium perovskites such as La1−xCaxVO3, where Ca defects are represented by Coulomb potentials. The main goal of this paper is to explore what happens when long-range electron-electron (e-e)...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2018-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5042829 |