Magnetic field controlled hybrid semiconductor and resistive switching device for non-volatile memory applications
A magnetic-field-controlled non-volatile memory device is fabricated by coupling Hall effect and resistive switching effect. The non-volatile property of the device is due to the fact that the Hall voltage of the semiconductor changes the resistance state of the resistive switching unit. By changing...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-10-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5063734 |