Influence of Hydrogen Ions on the Performance of Thin-Film Transistors with Solution-Processed AlO<sub>x</sub> Gate Dielectrics
Over the past decade, there have been many reports on solution-processed oxide thin-film transistors (TFTs) with high mobility (even >100 cm<sup>2</sup> V<sup>−1</sup>s<sup>−1</sup>). However, the capacitance uncertainty of the solution-processed oxide gate die...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-05-01
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| Series: | Applied Sciences |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2076-3417/11/10/4393 |