Performance Enhancement in N<sub>2</sub> Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlO<sub>X</sub> Gate Dielectric with Γ-Shaped Gate Engineering

Performance Enhancement in N<sub>2</sub> Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlO<sub>X</sub> Gate Dielectric with Γ-Shaped Gate Engineering

In this paper, we have demonstrated the optimized device performance in the Γ-shaped gate AlGaN/AlN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) by incorporating aluminum into atomic layer deposited (ALD) HfO<sub>2</sub> and comparing it with the commonly us...

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Bibliographic Details
Main Authors: Shun-Kai Yang, Soumen Mazumder, Zhan-Gao Wu, Yeong-Her Wang
Format: Article
Language:English
Published: MDPI AG 2021-03-01
Series:Materials
Subjects:
AlGaN/AlN/GaN
MOS-HEMT
HfAlO<sub>X</sub>
HfO<sub>2</sub>
interface trap density
post-deposition annealing (PDA), Γ-shaped gate
Online Access:https://www.mdpi.com/1996-1944/14/6/1534

Internet

https://www.mdpi.com/1996-1944/14/6/1534

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