Modeling Electrical Switching Behavior of Carbon Resistive Memory

The amorphous carbon-based resistive memory has recently attained vast attention due to its non-volatility, fast switching speed, long data retention, and multilevel recording. However, the memory switching mechanism of amorphous carbon media remains mysterious and thus severely restricted its appli...

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Bibliographic Details
Main Authors: Qiao-Feng Ou, Lei Wang, Bang-Shu Xiong
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Online Access:https://ieeexplore.ieee.org/document/8951157/