Low-noise GaAs quantum dots for quantum photonics
GaAs quantum dots emitting at the near-red part of the spectrum usually suffers from excess charge-noise. With a careful design of a n-i-p-diode structure hosting GaAs quantum dots, the authors demonstrate ultralow-noise behaviour and high-fidelity spin initialisation close to rubidium wavelengths.
| Main Authors: | , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Nature Publishing Group
2020-09-01
|
| Series: | Nature Communications |
| Online Access: | https://doi.org/10.1038/s41467-020-18625-z |