Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates

<p>Abstract</p> <p>In this study, we used metal organic chemical vapor deposition to form gallium nitride (GaN) epilayers on c- and a-axis sapphire substrates and then used the nanoscratch technique and atomic force microscopy (AFM) to determine the nanotribological behavior and de...

Full description

Bibliographic Details
Main Authors: Wen Hua-Chiang, Jeng Yeau-Ren, Lin Meng-Hung, Chou Chang-Pin
Format: Article
Language:English
Published: SpringerOpen 2010-01-01
Series:Nanoscale Research Letters
Subjects:
Gallium nitride
Metal organic chemical vapor deposition
Nanoscratch
Atomic force microscopy
Online Access:http://dx.doi.org/10.1007/s11671-010-9717-8

Internet

http://dx.doi.org/10.1007/s11671-010-9717-8

Similar Items