Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
In this paper, we investigated the performance of an n-type tin-oxide (SnO<sub>x</sub>) thin film transistor (TFT) by experiments and simulation. The fabricated SnO<sub>x</sub> TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off cur...
| Main Authors: | , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2020-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9060932/ |