Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

In this paper, we investigated the performance of an n-type tin-oxide (SnO<sub>x</sub>) thin film transistor (TFT) by experiments and simulation. The fabricated SnO<sub>x</sub> TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off cur...

Full description

Bibliographic Details
Main Authors: Z. W. Shang, J. Ma, W. D. Liu, Y. C. Fan, H. H. Hsu, Z. W. Zheng, C. H. Cheng
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Thin film transistor (TFT)
tin-oxide (SnOₓ)
plasma
TCAD
Online Access:https://ieeexplore.ieee.org/document/9060932/
id doaj-18af6d2cddc44e7eafc20ae73ab753e7
record_format Article
spelling doaj-18af6d2cddc44e7eafc20ae73ab753e72021-03-29T18:51:29ZengIEEEIEEE Journal of the Electron Devices Society2168-67342020-01-01848548910.1109/JEDS.2020.29861729060932Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma ProcessingZ. W. Shang0J. Ma1W. D. Liu2Y. C. Fan3H. H. Hsu4Z. W. Zheng5C. H. Cheng6School of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaDepartment of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, TaiwanDepartment of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, TaiwanSchool of Electronic Science and Engineering, Xiamen University, Xiamen, ChinaDepartment of Mechatronic Engineering, National Taiwan Normal University, Taipei, TaiwanIn this paper, we investigated the performance of an n-type tin-oxide (SnO<sub>x</sub>) thin film transistor (TFT) by experiments and simulation. The fabricated SnO<sub>x</sub> TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4&#x00D7;10<sup>4</sup>, a high field-effect mobility of 18.5 cm<sup>2</sup>/V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnO<sub>x</sub>. Furthermore, a TCAD simulation based on the n-type SnO<sub>x</sub> TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnO<sub>x</sub> TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnO<sub>x</sub> TFT device by channel plasma processing has considerable potential for next-generation high-performance display application.https://ieeexplore.ieee.org/document/9060932/Thin film transistor (TFT)tin-oxide (SnOₓ)plasmaTCAD
collection DOAJ
language English
format Article
sources DOAJ
author Z. W. Shang
J. Ma
W. D. Liu
Y. C. Fan
H. H. Hsu
Z. W. Zheng
C. H. Cheng
spellingShingle Z. W. Shang
J. Ma
W. D. Liu
Y. C. Fan
H. H. Hsu
Z. W. Zheng
C. H. Cheng
Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
IEEE Journal of the Electron Devices Society
Thin film transistor (TFT)
tin-oxide (SnOₓ)
plasma
TCAD
author_facet Z. W. Shang
J. Ma
W. D. Liu
Y. C. Fan
H. H. Hsu
Z. W. Zheng
C. H. Cheng
author_sort Z. W. Shang
title Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
title_short Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
title_full Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
title_fullStr Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
title_full_unstemmed Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
title_sort performance investigation of an n-type tin-oxide thin film transistor by channel plasma processing
publisher IEEE
series IEEE Journal of the Electron Devices Society
issn 2168-6734
publishDate 2020-01-01
description In this paper, we investigated the performance of an n-type tin-oxide (SnO<sub>x</sub>) thin film transistor (TFT) by experiments and simulation. The fabricated SnO<sub>x</sub> TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off current ratio of 4.4&#x00D7;10<sup>4</sup>, a high field-effect mobility of 18.5 cm<sup>2</sup>/V.s and a threshold swing of 405 mV/decade, which could be attributed to the excess reacted oxygen incorporated to the channel to form the oxygen-rich n-type SnO<sub>x</sub>. Furthermore, a TCAD simulation based on the n-type SnO<sub>x</sub> TFT device was performed by fitting the experimental data to investigate the effect of the channel traps on the device performance, indicating that performance enhancements were further achieved by suppressing the density of channel traps. In addition, the n-type SnO<sub>x</sub> TFT device exhibited high stability upon illumination with visible light. The results show that the n-type SnO<sub>x</sub> TFT device by channel plasma processing has considerable potential for next-generation high-performance display application.
topic Thin film transistor (TFT)
tin-oxide (SnOₓ)
plasma
TCAD
url https://ieeexplore.ieee.org/document/9060932/
work_keys_str_mv AT zwshang performanceinvestigationofanntypetinoxidethinfilmtransistorbychannelplasmaprocessing
AT jma performanceinvestigationofanntypetinoxidethinfilmtransistorbychannelplasmaprocessing
AT wdliu performanceinvestigationofanntypetinoxidethinfilmtransistorbychannelplasmaprocessing
AT ycfan performanceinvestigationofanntypetinoxidethinfilmtransistorbychannelplasmaprocessing
AT hhhsu performanceinvestigationofanntypetinoxidethinfilmtransistorbychannelplasmaprocessing
AT zwzheng performanceinvestigationofanntypetinoxidethinfilmtransistorbychannelplasmaprocessing
AT chcheng performanceinvestigationofanntypetinoxidethinfilmtransistorbychannelplasmaprocessing
_version_ 1724196341396013056

Similar Items