Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
In this paper, we investigated the performance of an n-type tin-oxide (SnO<sub>x</sub>) thin film transistor (TFT) by experiments and simulation. The fabricated SnO<sub>x</sub> TFT device by oxygen plasma treatment on the channel exhibited n-type conduction with an on/off cur...
Main Authors: | Z. W. Shang, J. Ma, W. D. Liu, Y. C. Fan, H. H. Hsu, Z. W. Zheng, C. H. Cheng |
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Format: | Article |
Language: | English |
Published: |
IEEE
2020-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9060932/ |
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