Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory
Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO)...
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| Format: | Article |
| Language: | English |
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MDPI AG
2019-02-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/10/2/151 |