High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs

High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs

The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous (P7+) and 80 MeV nitrogen (N6+) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I–V characterist...

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Bibliographic Details
Main Authors: Vinayakprasanna N. Hegde, K.C. Praveen, T.M. Pradeep, N. Pushpa, John D. Cressler, Ambuj Tripathi, K. Asokan, A.P. Gnana Prakash
Format: Article
Language:English
Published: Elsevier 2019-08-01
Series:Nuclear Engineering and Technology
Online Access:http://www.sciencedirect.com/science/article/pii/S1738573318304108

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http://www.sciencedirect.com/science/article/pii/S1738573318304108

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