Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX<sub>2</sub>) channel-based tunnel field effect transistor (TFET). Five MX<sub>2</sub> materials (MoS<sub>2</sub>,MoSe<sub>2</s...

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Bibliographic Details
Main Authors: Ram Krishna Ghosh, Santanu Mahapatra
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Tunnel field effect transistor
2-D crystal
atomistic simulation
complex band structure
band-to-band tunneling
Online Access:https://ieeexplore.ieee.org/document/6675794/

Internet

https://ieeexplore.ieee.org/document/6675794/

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