High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS<sub>2</sub> Film Using UHV RF Magnetron Sputtering and Sulfurization
A high Hall-effect mobility of 1,250 cm<sup>2</sup>V<sup>1</sup>s<sup>-1</sup> is achieved in ZrS<sub>2</sub> film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS<sub>2</sub> film was obtained by sputteri...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8848462/ |