High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS<sub>2</sub> Film Using UHV RF Magnetron Sputtering and Sulfurization

High Hall-Effect Mobility of Large-Area Atomic-Layered Polycrystalline ZrS<sub>2</sub> Film Using UHV RF Magnetron Sputtering and Sulfurization

A high Hall-effect mobility of 1,250 cm<sup>2</sup>V<sup>1</sup>s<sup>-1</sup> is achieved in ZrS<sub>2</sub> film as a two-dimensional semiconductor. A large-area atomic-layered polycrystalline ZrS<sub>2</sub> film was obtained by sputteri...

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Bibliographic Details
Main Authors: Masaya Hamada, Kentaro Matsuura, Takuro Sakamoto, Iriya Muneta, Takuya Hoshii, Kuniyuki Kakushima, Kazuo Tsutsui, Hitoshi Wakabayashi
Format: Article
Language:English
Published: IEEE 2019-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Transition metal dichalcogenide (TMDC)
zirconium disulfide (ZrS₂)
radio-frequency magnetron sputtering
sulfur vapor annealing
Online Access:https://ieeexplore.ieee.org/document/8848462/

Internet

https://ieeexplore.ieee.org/document/8848462/

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