Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET

Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET

In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive...

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Bibliographic Details
Main Authors: Won Douk Jang, Young Jun Yoon, Min Su Cho, Jun Hyeok Jung, Sang Ho Lee, Jaewon Jang, Jin-Hyuk Bae, In Man Kang
Format: Article
Language:English
Published: MDPI AG 2019-10-01
Series:Micromachines
Subjects:
tunnel field-effect transistor (tfet)
low power
vertical nanowire
core–shell
germanium
technology computer-aided design (tcad)
Online Access:https://www.mdpi.com/2072-666X/10/11/749

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https://www.mdpi.com/2072-666X/10/11/749

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