Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET
In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive...
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doaj-19d823c6f17e429faf5604e1ed885e3f2020-11-25T02:27:40ZengMDPI AGMicromachines2072-666X2019-10-01101174910.3390/mi10110749mi10110749Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FETWon Douk Jang0Young Jun Yoon1Min Su Cho2Jun Hyeok Jung3Sang Ho Lee4Jaewon Jang5Jin-Hyuk Bae6In Man Kang7School of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaCenter for BioMicroSystems, Brain Science Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaSchool of Electronics Engineering, Kyungpook National University, Daegu 41566, KoreaIn this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive band-to-band tunneling (BTBT) area can be achieved compared with the conventional core−shell VNWTFETs. The channel thickness (<i>T</i><sub>ch</sub>), the gate-metal height (<i>H</i><sub>g</sub>), and the channel height (<i>H</i><sub>ch</sub>) were considered as the design parameters for the optimization of device performances. The designed gate-metal-core VNWTFET exhibits outstanding performance, with an on-state current (<i>I</i><sub>on</sub>) of 80.9 μA/μm, off-state current (<i>I</i><sub>off</sub>) of 1.09 × 10<sup>−12</sup> A/μm, threshold voltage (<i>V</i><sub>t</sub>) of 0.21 V, and subthreshold swing (SS) of 42.8 mV/dec. Therefore, the proposed device was demonstrated to be a promising logic device for low-power applications.https://www.mdpi.com/2072-666X/10/11/749tunnel field-effect transistor (tfet)low powervertical nanowirecore–shellgermaniumtechnology computer-aided design (tcad) |
collection |
DOAJ |
language |
English |
format |
Article |
sources |
DOAJ |
author |
Won Douk Jang Young Jun Yoon Min Su Cho Jun Hyeok Jung Sang Ho Lee Jaewon Jang Jin-Hyuk Bae In Man Kang |
spellingShingle |
Won Douk Jang Young Jun Yoon Min Su Cho Jun Hyeok Jung Sang Ho Lee Jaewon Jang Jin-Hyuk Bae In Man Kang Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET Micromachines tunnel field-effect transistor (tfet) low power vertical nanowire core–shell germanium technology computer-aided design (tcad) |
author_facet |
Won Douk Jang Young Jun Yoon Min Su Cho Jun Hyeok Jung Sang Ho Lee Jaewon Jang Jin-Hyuk Bae In Man Kang |
author_sort |
Won Douk Jang |
title |
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET |
title_short |
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET |
title_full |
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET |
title_fullStr |
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET |
title_full_unstemmed |
Design and Optimization of Germanium-Based Gate-Metal-Core Vertical Nanowire Tunnel FET |
title_sort |
design and optimization of germanium-based gate-metal-core vertical nanowire tunnel fet |
publisher |
MDPI AG |
series |
Micromachines |
issn |
2072-666X |
publishDate |
2019-10-01 |
description |
In this paper, a germanium-based gate-metal-core vertical nanowire tunnel field effect transistor (VNWTFET) has been designed and optimized using the technology computer-aided design (TCAD) simulation. In the proposed structure, by locating the gate-metal as a core of the nanowire, a more extensive band-to-band tunneling (BTBT) area can be achieved compared with the conventional core−shell VNWTFETs. The channel thickness (<i>T</i><sub>ch</sub>), the gate-metal height (<i>H</i><sub>g</sub>), and the channel height (<i>H</i><sub>ch</sub>) were considered as the design parameters for the optimization of device performances. The designed gate-metal-core VNWTFET exhibits outstanding performance, with an on-state current (<i>I</i><sub>on</sub>) of 80.9 μA/μm, off-state current (<i>I</i><sub>off</sub>) of 1.09 × 10<sup>−12</sup> A/μm, threshold voltage (<i>V</i><sub>t</sub>) of 0.21 V, and subthreshold swing (SS) of 42.8 mV/dec. Therefore, the proposed device was demonstrated to be a promising logic device for low-power applications. |
topic |
tunnel field-effect transistor (tfet) low power vertical nanowire core–shell germanium technology computer-aided design (tcad) |
url |
https://www.mdpi.com/2072-666X/10/11/749 |
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