Three-Dimensional Numerical Study on the Efficiency Droop in InGaN/GaN Light-Emitting Diodes
The efficiency droop characteristics of single quantum well (SQW) InGaN/GaN light-emitting diodes (LEDs) including the phase-space filling (PSF) effect are predicted by a three-dimensional (3-D) numerical simulation. The carrier transport is based on the solution of the 3-D non-linear Poisson and dr...
Main Authors: | , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2019-01-01
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Series: | IEEE Photonics Journal |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/8613781/ |