Electrothermal Model of SiC Power BJT
This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified. The electrical model is based on the isothermal Gummel–Poon mo...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-05-01
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| Series: | Energies |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1073/13/10/2617 |