Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors

Impact of Photo-Excitation on Leakage Current and Negative Bias Instability in InSnZnO Thickness-Varied Thin-Film Transistors

InSnZnO thin-film transistors (ITZO TFTs), having high carrier mobility, guarantee the benefits of potential applications in the next generation of super-high-definition flat-panel displays. However, the impact of photo-excitation on the leakage current and negative bias stress (NBIS) of ITZO TFTs m...

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Bibliographic Details
Main Authors: Dapeng Wang, Mamoru Furuta, Shigekazu Tomai, Koki Yano
Format: Article
Language:English
Published: MDPI AG 2020-09-01
Series:Nanomaterials
Subjects:
photo-excitation
leakage current
NBIS-induced instability
InSnZnO thickness
oxide TFTs
Online Access:https://www.mdpi.com/2079-4991/10/9/1782

Internet

https://www.mdpi.com/2079-4991/10/9/1782

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