Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl2O4 Quasi‐Quantum Well Structures

Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl2O4 Quasi‐Quantum Well Structures

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Abstract The quantum well (QW) realizes new functionalities due to the discrete electronic energy levels formed in the well‐shaped potential. Magnetic tunnel junctions (MTJs) combined with a quasi‐QW structure of Cr/ultrathin‐Fe/MgAl2O4(001)/Fe, in which the Cr quasi‐barrier layer confines Δ1 up‐spi...

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Bibliographic Details
Main Authors: Qingyi Xiang, Hiroaki Sukegawa, Mohamed Belmoubarik, Muftah Al‐Mahdawi, Thomas Scheike, Shinya Kasai, Yoshio Miura, Seiji Mitani
Format: Article
Language:English
Published: Wiley 2019-10-01
Series:Advanced Science
Subjects:
coherent tunneling
quantum well
resonant tunneling
spinel
tunnel magnetoresistance
Online Access:https://doi.org/10.1002/advs.201901438

Internet

https://doi.org/10.1002/advs.201901438

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