Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

Correlation between Defects and Electrical Performances of Ion-Irradiated 4H-SiC p–n Junctions

In this study, 4H-SiC p–n junctions were irradiated with 700 keV He<sup>+</sup> ions in the fluence range 1.0 × 10<sup>12</sup> to 1.0 × 10<sup>15</sup> ions/cm<sup>2</sup>. The effects of irradiation were investigated by current–voltage (I–V) and capa...

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Bibliographic Details
Main Authors: Domenico Pellegrino, Lucia Calcagno, Massimo Zimbone, Salvatore Di Franco, Antonella Sciuto
Format: Article
Language:English
Published: MDPI AG 2021-04-01
Series:Materials
Subjects:
silicon carbide
p–n junction diode
ion irradiation
point defects
defect clustering
Online Access:https://www.mdpi.com/1996-1944/14/8/1966

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https://www.mdpi.com/1996-1944/14/8/1966

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