Low Loss and Low EMI Noise CSTBT With Split Gate and Recessed Emitter Trench
A novel carrier stored trench bipolar transistor (CSTBT) with split gate (SG) and recessed emitter trench (SGRET CSTBT) is proposed. The proposed device features a SG structure with thicker oxide layer under the trench gate and recessed trench emitter, respectively. Compared with the conventional CS...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
IEEE
2021-01-01
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Series: | IEEE Journal of the Electron Devices Society |
Subjects: | |
Online Access: | https://ieeexplore.ieee.org/document/9486839/ |