Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

Parameter Extraction and Compact Modeling of 1/f Noise for Amorphous ESL IGZO TFTs

In this paper, the flicker noise properties of bottom-gate ESL structured amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) from two different technologies have been studied and modeled. Model development is carried out by adapting the Unified Model parameter Extraction Method (UMEM), develope...

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Bibliographic Details
Main Authors: Wondwosen E. Muhea, Gerard U. Castillo, Harold C. Ordonez, Thomas Gneiting, Gerard Ghibaudo, Benjamin Iniguez
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
a-IGZO
flicker noise
model
TFT
Online Access:https://ieeexplore.ieee.org/document/8974237/

Internet

https://ieeexplore.ieee.org/document/8974237/

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