In-plane-gate flexible single-crystalline silicon thin-film transistors with high-k gate dielectrics on plastic substrates
Flexible single-crystalline silicon in-plane-gate thin-film transistors (TFTs) with high-k gate dielectrics on plastic substrates have been demonstrated in this letter. The high-k Nb2O5-Bi2O3-MgO (BMN) ceramic has been deposited as gate dielectric layer by magnetron sputtering at room temperature. ∼...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-01-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5045521 |