Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

The surface electronic properties of bulk-grown β-Ga2O3 (2¯01) single crystals are investigated. The band gap is found using optical transmission to be 4.68 eV. High-resolution x-ray photoemission coupled with hybrid density functional theory calculation of the valence band density of states provide...

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Bibliographic Details
Main Authors: J. E. N. Swallow, J. B. Varley, L. A. H. Jones, J. T. Gibbon, L. F. J. Piper, V. R. Dhanak, T. D. Veal
Format: Article
Language:English
Published: AIP Publishing LLC 2019-02-01
Series:APL Materials
Online Access:http://dx.doi.org/10.1063/1.5054091

Internet

http://dx.doi.org/10.1063/1.5054091

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