Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

Multi-Gain-Stage InGaAs Avalanche Photodiode With Enhanced Gain and Reduced Excess Noise

We report the design, fabrication, and test of an InGaAs avalanche photodiode (APD) for 950-1650 nm wavelength sensing applications. The APD is grown by molecular beam epitaxy on InP substrates from lattice-matched InGaAs and InAlAs alloys. Avalanche multiplication inside the APD occurs in a series...

Full description

Bibliographic Details
Main Authors: George M. Williams, Madison Compton, David A. Ramirez, Majeed M. Hayat, Andrew S. Huntington
Format: Article
Language:English
Published: IEEE 2013-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Avalanche photodiode
optical receiver
photo detector
photon counting
Online Access:https://ieeexplore.ieee.org/document/6509920/

Internet

https://ieeexplore.ieee.org/document/6509920/

Similar Items