Epitaxial growth and characterization of CuGa2O4 films by laser molecular beam epitaxy
Ga2O3 with a wide bandgap of ∼ 4.9 eV can crystalize in five crystalline phases. Among those phases, the most stable monoclinic β-Ga2O3 has been studied most, however, it is hard to find materials lattice matching with β-Ga2O3 to grown epitaxial thin films for optoelectronic applications. In this wo...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-11-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5009032 |